FDZ206P Fairchild Semiconductor, FDZ206P Datasheet
FDZ206P
Manufacturer Part Number
FDZ206P
Description
MOSFET P-CH 20V 13A BGA
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDZ206P.pdf
(5 pages)
Specifications of FDZ206P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 13A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 4.5V
Input Capacitance (ciss) @ Vds
4280pF @ 10V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
16-BGA (30 pos)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0095 Ohms
Forward Transconductance Gfs (max / Min)
58 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
13 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDZ206P
Manufacturer:
FAIRCHILD
Quantity:
37 368
Company:
Part Number:
FDZ206P
Manufacturer:
Fairchild Semiconductor
Quantity:
10 000
FDZ206P
P-Channel 2.5V Specified PowerTrench® ® ® ® BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ206P minimizes both PCB space
and r
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low r
Applications
• Battery management
• Load switch
• Battery protection
©2006 Fairchild Semiconductor Corporation
Gate
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GS
D
θJA
θJB
θJC
, T
Device Marking
STG
DS(on)
206P
.
Fairchild’s
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Bottom
This
BGA
advanced
MOSFET embodies a
– Continuous
– Pulsed
FDZ206P
Device
Parameter
2.5V
Index
slot
specified
DS(on)
T
A
=25
.
o
C unless otherwise noted
Reel Size
13”
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1)
Top
Features
• –13 A, –20 V. r
• Occupies only 14 mm
• Ultra-thin package: less than 0.80 mm height when
• 0.65 mm ball pitch
• 3.5 x 4 mm
• High power and current handling capability
Only 42% of the area of SO-8
mounted to PCB
2
footprint
Tape width
r
DS(on)
DS(on)
–55 to +150
12mm
Ratings
= 9.5 mΩ @ V
= 14.5 mΩ @ V
–20
±12
–13
–60
2.2
4.5
0.6
2
56
of PCB area.
G
February 2006
GS
GS
= –4.5 V
= –2.5 V
FDZ206P Rev. E (W)
S
D
Quantity
4000
Units
°C/W
°C
W
V
V
A
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FDZ206P Summary of contents
Page 1
... FDZ206P P-Channel 2.5V Specified PowerTrench® ® ® ® BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and r . This BGA MOSFET embodies a DS(on) breakthrough in packaging technology which enables ...
Page 2
... Min Typ Max Units –20 V –13 mV/°C –1 µA –100 nA 100 nA –0.6 –0.9 –1.5 V 3.3 mV/°C 7 9.5 mΩ – 4280 pF 873 pF 400 115 184 –1.8 A –0.7 –1 119°C/W when mounted on a minimum pad copper FDZ206P Rev. E (W) ...
Page 3
... Dimensional Outline and Pad Layout FDZ206P Rev. E (W) ...
Page 4
... C 1 0.1 0.01 0.001 0.0001 0 2 2.5 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -6 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDZ206P Rev ...
Page 5
... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz iss C oss C rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 119° C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 119 ° C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDZ206P Rev. E (W) ...