FDW258P Fairchild Semiconductor, FDW258P Datasheet
FDW258P
Manufacturer Part Number
FDW258P
Description
MOSFET P-CH 12V 9A 8-TSSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDW258P.pdf
(5 pages)
Specifications of FDW258P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 9A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
73nC @ 4.5V
Input Capacitance (ciss) @ Vds
5049pF @ 5V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW258P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDW258P_NL
Manufacturer:
LT
Quantity:
1 073
FDW258P
P-Channel 1.8V Specified PowerTrench
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
, T
Device Marking
STG
258P
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
TSSOP-8
– Continuous
– Pulsed
FDW258P
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Features
• –9 A, –12 V.
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely
• Low profile TSSOP-8 package
MOSFET
low R
DS(ON)
5
6
7
8
Tape width
–55 to +150
12mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–12
–50
114
1.3
0.6
±8
–9
87
= 11 mΩ @ V
= 14 mΩ @ V
= 20 mΩ @ V
4
3
2
1
July 2008
GS
GS
GS
FDW258P Rev D1 (W)
Quantity
2500 units
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C
W
V
V
A
Related parts for FDW258P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDW258P Summary of contents
Page 1
... Reel Size Tape width 13’’ 12mm July 2008 = 11 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON Units –12 V ±8 V –9 A –50 1.3 W 0.6 °C 87 °C/W 114 Quantity 2500 units FDW258P Rev D1 (W) ...
Page 2
... Typ Max Units –12 V –3 mV/°C –1 µA 100 nA –100 nA –0.4 –0.6 –1 mV/°C mΩ 8.6 11 10.6 14 13.8 20 11.2 14 – 5049 pF 1943 pF 1226 201 322 ns 148 237 –1.25 A –0.6 –1.2 V (Note 2) b) 114°C/W when mounted on a minimum pad copper. FDW258P Rev. D1 (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 1.8V -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW258P Rev ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 114°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 114 C/W θJA P(pk ( θJA Duty Cycle 100 FDW258P Rev. D1 (W) 12 1000 1000 ...
Page 5
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...