FQPF12P20XDTU Fairchild Semiconductor, FQPF12P20XDTU Datasheet - Page 3

• Manufacturer Part Number: FQPF12P20XDTU
• Description: MOSFET P-CH 200V 7.3A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF12P20XDTU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 470 mOhm @ 3.65A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
2400
2000
1600
1200
800
400
10
2.0
1.5
1.0
0.5
0.0
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
10
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
C
C
C
20
oss
rss
iss
V
GS
V
GS
= - 20V
= - 10V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
30
gs
ds
gd
10
1
C
+ C
+ C
1
= 25℃
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
GS
= shorted)
= 0 V
40
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
5
Variation vs. Source Current
0.5
150℃
150℃
25℃
4
-V
-V
10
Q
SD
and Temperature
GS
G
1.0
25℃
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
15
V
DS
V
-55℃
1.5
DS
= -160V
V
6
DS
= -100V
= -40V
20
2.0
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -40V
= 0V
2.5
D
30
= -11.5 A
Rev. B, May 2000
3.0
10
35