HUFA76619D3ST Fairchild Semiconductor, HUFA76619D3ST Datasheet
HUFA76619D3ST
Specifications of HUFA76619D3ST
Related parts for HUFA76619D3ST
HUFA76619D3ST Summary of contents
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... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUFA76619D3 HUFA76619D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76619D3ST Unless Otherwise Specified DSS DGR , T J STG January 2002 = 0 ...
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... Gate to Drain “Miller” Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS 250 (Figure 12) DSS ...
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... SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 10V GS TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2002 Fairchild Semiconductor Corporation 150 175 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V ...
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... 12A 18A GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 500 100 100 s 1ms 10ms 100 200 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING 3 2.5 2 ...
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... GS 10 0.1 1 DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 200 V = 4.5V 50V 12A 160 120 GATE TO SOURCE RESISTANCE ( ) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2002 Fairchild Semiconductor Corporation (Continued 250 120 160 200 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN ISS ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT) ...
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... S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2002 Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...