HUF75617D3 Fairchild Semiconductor, HUF75617D3 Datasheet

MOSFET N-CH 100V 16A TO-251AA

HUF75617D3

Manufacturer Part Number
HUF75617D3
Description
MOSFET N-CH 100V 16A TO-251AA
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75617D3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 20V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
64W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75617D3
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
16A, 100V, 0.090 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE: T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
Continuous (T
Continuous (T
JEDEC TO-251AA
HUF75617D3
J
= 25
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
o
C to 150
C
C
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25
= 100
SOURCE
DRAIN
GS
G
o
o
C.
C, V
o
GATE
C, V
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
D
S
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SOURCE
GATE
T
Data Sheet
For severe environments, see our Automotive HUFA series.
C
JEDEC TO-252AA
HUF75617D3S
= 25
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75617D3ST.
HUF75617D3
HUF75617D3S
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
HUF75617D3, HUF75617D3S
Electrical Models
DS(ON)
December 2001
J
, T
= 0.090
DGR
DSS
STG
pkg
DM
GS
D
D
D
L
TO-251AA
TO-252AA
V
PACKAGE
GS
Figures 6, 14, 15
HUF75617D3S
HUF75617D3,
-55 to 175
Figure 4
10V
0.43
100
100
300
260
16
11
64
20
75617D
75617D
BRAND
HUF75617D3 Rev. B
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
C

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HUF75617D3 Summary of contents

Page 1

... Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER HUF75617D3 HUF75617D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75617D3ST Unless Otherwise Specified , 0.090 V 10V ...

Page 2

... RSS SYMBOL TEST CONDITIONS 16A 16A, dI /dt = 100A 16A, dI /dt = 100A MIN TYP 100 - - - 0.080 - - - - - - - 50V 1.0mA - 1.3 - 2.7 - 6.4 - 570 - 125 - 20 MIN TYP - - - - - - - - MAX UNITS - 250 A 100 0.090 ¾ o 2.34 C/W o 100 C 108 1 MAX UNITS 1. 170 nC HUF75617D3 Rev. B ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF75617D3 Rev. B 175 ...

Page 4

... DSS STARTING T o STARTING T = 150 0.001 0.01 0 TIME IN AVALANCHE (ms) AV CAPABILITY 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ) - 250 120 160 200 o C) HUF75617D3 Rev. B ...

Page 5

... Fairchild Semiconductor Corporation (Continued) 2000 1000 80 120 160 200 o C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN 4 DESCENDING ORDER GATE CHARGE (nC OSS DS GD 100 C C RSS GD 10 0.1 1 DRAIN TO SOURCE VOLTAGE ( 16A 10A 0V 1MHz ISS GS GD 100 HUF75617D3 Rev. B ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM 20V GS t OFF d(OFF 90% 10% 90% 50% HUF75617D3 Rev. B ...

Page 7

... PSPICE Electrical Model .SUBCKT HUF75617d3 rev 24May 2000 9.9e- 1.0e-9 CIN 6 8 5.4e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 117.8 EDS EGS ESG EVTHRES EVTEMP LDRAIN 2 5 1.0e-9 LGATE 1 9 5.24e-9 GATE LSOURCE 3 7 4.25e-9 1 MMED MMEDMOD ...

Page 8

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + LGATE EVTEMP GATE RGATE RLGATE S1A S2A S1B S2B EGS RSLC1 51 ISCL DBREAK 50 RDRAIN MWEAK 8 EBREAK MMED + MSTRO 17 18 CIN - 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES LDRAIN DRAIN 2 RLDRAIN DBODY LSOURCE SOURCE 3 VBAT HUF75617D3 Rev. B ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75617D3 Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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