FQD4P40TF Fairchild Semiconductor, FQD4P40TF Datasheet - Page 3

• Manufacturer Part Number: FQD4P40TF
• Description: MOSFET P-CH 400V 2.7A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD4P40TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 Ohm @ 1.35A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor International
Typical Characteristics
1200
1000
10
10
800
600
400
200
10
10
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
8
6
4
2
0
0
-1
-2
1
0
10
10
0
Figure 1. On-Region Characteristics
-1
-1
Top :
Bottom : -5.5 V
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
-V
3
DS
V
, Drain-Source Voltage [V]
DS
, Drain-Source Voltage [V]
-I
D
10
10
V
, Drain Current [A]
0
0
GS
= - 20V
6
V
GS
= - 10V
C
C
C
oss
iss
rss
※ Notes :
1. 250μ s Pulse Test
2. T
C
C
C
iss
oss
rss
C
= C
= C
= C
10
= 25℃
10
※ Note : T
9
gs
gd
ds
1
1
+ C
+ C
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
GS
= shorted)
= 0 V
12
10
10
10
10
10
10
12
10
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 2. Transfer Characteristics
Variation vs. Source Current
2
0.5
150℃
25℃
4
150℃
and Temperature
4
-V
-V
Q
SD
GS
25℃
6
G
1.0
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
V
DS
8
V
V
DS
= -320V
DS
= -200V
-55℃
= -80V
1.5
10
6
12
2.0
14
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -50V
16
= 0V
2.5
D
= -3.5 A
18
Rev. A2, January 2009
3.0
10
20