FQB4P25TM Fairchild Semiconductor, FQB4P25TM Datasheet - Page 4

• Manufacturer Part Number: FQB4P25TM
• Description: MOSFET P-CH 250V 4A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB4P25TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.63 Ohms
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 4 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
o
D = 0 . 5
0 .0 2
0 .0 5
0 .0 1
C
o
0 .2
0 .1
C
50
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
10
1 ms
※ Note :
1. V
2. I
t
2
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
100 s
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
- T
( t ) = 1 . 6 7 ℃ /W M a x .
50
C
= P
vs. Case Temperature
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
* Z
2
1
0
θ J C
/t
75
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.0 A
= -10 V
Rev. A2, December 2000
200
150