NDS9430A Fairchild Semiconductor, NDS9430A Datasheet

MOSFET P-CH 20V 5.3A 8-SOIC

NDS9430A

Manufacturer Part Number
NDS9430A
Description
MOSFET P-CH 20V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9430A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
___________________________________________________________________________________________
D
J
DSS
GSS
D
NDS9430A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
,T
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
-5.3A, -20V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
8
5
6
7
R
R
NDS9430A
DS(ON)
DS(ON)
DS(ON)
-55 to 150
± 5.3
± 20
± 20
-20
2.5
1.2
50
25
1
= 0.05
= 0.065
= 0.09
@ V
@ V
@ V
GS
GS
4
3
2
1
GS
= -10V
= -4.5V.
= -6V
December 1997
DS(ON).
NDS9430A Rev.A
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS9430A

NDS9430A Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) December 1997 = 0. -10V DS(ON 0.065 @ V = -6V DS(ON 0. -4.5V. DS(ON) GS DS(ON NDS9430A Units -20 ± 20 ± 5.3 ± 20 2.5 1.2 1 -55 to 150 50 °C/W 25 °C/W NDS9430A Rev °C ...

Page 2

... I = -250 µ 125° - -5 125° - - 1.0 MHz GEN GEN Min Typ Max Units - µA -5 µA 100 nA -100 0.038 0.05 0.054 0.1 0.046 0.065 0.064 0.09 - 950 pF 610 pF 220 120 ns 45 100 NDS9430A Rev.A ...

Page 3

... C/W when mounted on a 0.006 in pad of 2oz cpper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.4 A (Note 0V -2 /dt = 100 A/µ Min Typ Max Units -2.1 -0.85 -1.2 100 is guaranteed NDS9430A Rev ...

Page 4

... Drain Current and Temperature 1 1.1 1 0.9 0.8 0.7 0 -50 -25 Figure 6. Gate Threshold Variation = -3.5V -4.0V -4.5V -5.0V -6.0V -6.0V -10V -4 -8 -12 -16 - DRAIN CURRENT ( 125°C J 25°C -55°C -5 -10 -15 - DRAIN CURRENT ( -250µ 100 125 150 T , JUNCTION TEMPERATURE (°C) J with Temperature NDS9430A Rev.A ...

Page 5

... C oss 4 C rss Figure 10. Gate Charge Characteristics t d(on OUT Figure 12. Switching Waveforms 25°C -55°C 0.3 0.6 0.9 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and Temperature V = -10V DS -15V -20V GATE CHARGE (nC off t t d(off PULSE W IDTH NDS9430A Rev INVERTED ...

Page 6

... SINGLE PULSE 4.5"x5" FR-4 Board R = See Note 0. 25°C Still Air 0.01 0.8 1 0.1 0.2 0 Figure 16. Maximum Safe Operating Area TIME (sec 4.5"x5" FR-4 Board Still Air 0.4 0.6 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS9430A Rev ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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