FQI2P25TU Fairchild Semiconductor, FQI2P25TU Datasheet - Page 3

• Manufacturer Part Number: FQI2P25TU
• Description: MOSFET P-CH 250V 2.3A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI2P25TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 40 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
400
300
200
100
10
10
15
12
-1
0
0
10
10
9
6
3
0
0.0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1.5
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
10
10
D
0
, Drain Current [A]
0
V
C
C
C
GS
oss
rss
iss
= - 20V
3.0
V
GS
= - 10V
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
1. 250  s Pulse Test
2. T
10

Note : T
10
4.5
gs
gd
ds
1
1
C
+ C
+ C
= 25 
gd
gd
(C

Notes :
J
ds
1. V
2. f = 1 MHz
= 25 
= shorted)
GS
= 0 V
6.0
10
10
10
10
12
10
-1
8
6
4
2
0
-1
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
0.6
4
150

-V
-V
2
Q
and Temperature
GS
SD
25

0.8
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
150

V
DS
V
25

3
1.0
DS
= -200V
V
DS
= -125V
= -50V
6
1.2
4
-55

1.4

Notes :

Notes :
1. V
2. 250  s Pulse Test
5
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
1.6
= -40V
= 0V
D
6
= -2.3 A
1.8
Rev. A, April 2000
2.0
10
7