FQPF13N10 Fairchild Semiconductor, FQPF13N10 Datasheet

MOSFET N-CH 100V 8.7A TO-220F

FQPF13N10

Manufacturer Part Number
FQPF13N10
Description
MOSFET N-CH 100V 8.7A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF13N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 4.35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF13N10
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF13N10L
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
FQPF13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
= 25°C)
Parameter
T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 8.7A, 100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
Typ
--
--
! "
! "
FQPF13N10
-55 to +175
= 0.18
!
!
!
!
S
D
"
"
"
"
"
"
6.15
34.8
300
100
8.7
8.7
3.0
6.0
0.2
95
30
25
@V
Max
62.5
QFET
QFET
QFET
QFET
5.0
GS
= 10 V
January 2001
Rev. A1, January 2001
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF13N10 Summary of contents

Page 1

... C Parameter January 2001 QFET QFET QFET QFET = 0. DS(on " " ! " ! " " " " " FQPF13N10 Units 100 8.7 6.15 34 8.7 3.0 mJ 6.0 V/ns 30 0.2 W/°C -55 to +175 300 Typ Max Units -- 5.0 °C/W -- 62.5 °C/W Rev. A1, January 2001 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 1.88mH 8.7A 25V ≤ 12.8A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 900 750 600 C 450 C 300 150 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ ※ Note : T = 25℃ 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 9.0 7.5 100 6 4.5 3.0 1.5 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2000 Fairchild Semiconductor International TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Rev. A1, January 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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