FQT2P25TF Fairchild Semiconductor, FQT2P25TF Datasheet - Page 6

• Manufacturer Part Number: FQT2P25TF
• Description: MOSFET P-CH 250V 0.55A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQT2P25TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 Ohm @ 275mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 550mA
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 0.55 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
V
V
I
I
GS
GS
S
S
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
DUT
DUT
Driver
Driver
I
I
I
I
I
FM
FM
S
S
S
D =
D =
D =
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Compliment of DUT
V
V
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
DS
DS
_
_
(N-Channel)
(N-Channel)
S
S
V
V
controlled by pulse period
controlled by pulse period
Body Diode Reverse Current
Body Diode Reverse Current
f
f
I
I
L
L L
RM
RM
G
G
di/dt
di/dt
V
V
DD
DD
V
V
10V
10V
DD
DD
Rev. A, May 2001