IRFNL210BTA_FP001 Fairchild Semiconductor, IRFNL210BTA_FP001 Datasheet - Page 7

• Manufacturer Part Number: IRFNL210BTA_FP001
• Description: MOSFET N-CH 200V 1A TO-92L
• Manufacturer: Fairchild Semiconductor

Specifications of IRFNL210BTA_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
0.50
0.10
4.90
3.90
0.20
0.20
0.80
[1.27
0.70MAX.
1.00MAX.
2.54 TYP
1.27TYP
TO-92L
0.10
0.20
]
Dimensions in Millimeters
0.45
0.10
Rev. A, December 2002