IRFNL210BTA_FP001 Fairchild Semiconductor, IRFNL210BTA_FP001 Datasheet - Page 4

• Manufacturer Part Number: IRFNL210BTA_FP001
• Description: MOSFET N-CH 200V 1A TO-92L
• Manufacturer: Fairchild Semiconductor

Specifications of IRFNL210BTA_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
-1
-2
-3
1
0
10
1.2
1.1
1.0
0.9
0.8
0
Figure 9. Maximum Safe Operating Area
-100
Figure 7. Breakdown Voltage Variation
-50
Operation in This Area
is Limited by R
V
DS
T
, Drain-Source Voltage [V]
J
1 0
, Junction Temperature [
1 0
1 0
1 0
DC
0
10
DS(on)
※ Notes :
-1
2
1
0
1 0
1. T
2. T
3. Single Pulse
1
C
J
-4
= 150
= 25
D = 0 . 5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 2
0 . 1
1 s
o
C
o
C
50
100 ms
Figure 11. Transient Thermal Response Curve
1 0
10 ms
100
s in g le p u ls e
(Continued)
-3
o
C]
※ Notes :
10
1 ms
t
1. V
2. I
100 s
2
1
, S q u a re W a v e P u ls e D u r a tio n [s e c ]
D
G S
= 250 μ A
= 0 V
150
1 0
-2
200
1 0
-1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
1 0
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-50
θ J L
J M
50
- T
(t) = 4 0 ℃ /W M a x .
C
vs Case Temperature
= P
T
vs Temperature
1 0
J
T
, Junction Temperature [
D M
C
0
, Case Temperature [ ℃ ]
1
* Z
75
1
θ J C
/t
2
(t)
50
1 0
100
2
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.5 A
= 10 V
Rev. A, December 2002
200
150