FQPF18N50V2 Fairchild Semiconductor, FQPF18N50V2 Datasheet

MOSFET N-CH 500V 18A TO-220F

FQPF18N50V2

Manufacturer Part Number
FQPF18N50V2
Description
MOSFET N-CH 500V 18A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF18N50V2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
265 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3290pF @ 25V
Power - Max
69W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Other names
Q2658628

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF18N50V2
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
Parameter
= 25°C)
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 18A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP18N20V2
FQP18N20V2
11.9
0.99
123
1.01
62.5
DS(on)
18
72
0.5
-55 to +150
= 0.14
12.3
200
340
300
6.5
18
30
FQPF18N20V2
FQPF18N20V2
G
@V
! ! ! !
! ! ! !
0.32
11.9
62.5
18
72
40
3.1
GS
--
QFET
= 10 V
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. B, August 2002
Units
W/°C
Units
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF18N50V2

FQPF18N50V2 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Case-to-Sink CS R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • 18A, 200V, R • Low gate charge ( typical 20 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 1.58mH 18A 50V ≤ 18A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2500 2000 1500 1000 C 500 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V ※ Note : ℃ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP18N20V2 Case Temperature [ ℃ Figure 10. Maximum Drain Current vs. Case Temperature ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP18N20V2 Figure 11-2. Transient Thermal Response Curve for FQPF18N20V2 ©2002 Fairchild Semiconductor Corporation (Continued) ※ θ ※ θ ℃ θ ℃ θ Rev. B, August 2002 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B, August 2002 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B, August 2002 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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