FCPF7N60T Fairchild Semiconductor, FCPF7N60T Datasheet - Page 3

• Manufacturer Part Number: FCPF7N60T
• Description: MOSFET N-CH 600V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF7N60T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1
Typical Performance Characteristics
3000
2000
1000
10
Figure 5. Capacitance Characteristics
10
10
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
-1
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
10
-1
-1
Top :
Bottom : 5.5 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
C
V
rss
DS
C
DS
, Drain-Source Voltage [V]
iss
C
, Drain-Source Voltage [V]
oss
10
10
I
D
0
, Drain Current [A]
0
10
V
GS
= 10V
C
C
C
iss
oss
rss
= C
= C
※
= C
10
10
1. 250μ s Pulse Test
2. T
15
Notes :
gs
※
gd
ds
1
1
V
+ C
+ C
C
Note : T
GS
= 25 ℃
gd
gd
※
= 20V
(C
1. V
2. f = 1 MHz
Notes :
ds
J
= shorted)
= 25 ℃
GS
= 0 V
20
3
10
10
12
10
10
10
10
10
8
6
4
2
0
-1
Figure 2. Transfer Characteristics
-1
Figure 4. Body Diode Forward Voltage
1
0
0
0.2
1
0
Figure 6. Gate Charge Characteristics
2
Variation vs. Source Current
0.4
5
150 ℃
4
V
V
and Temperatue
0.6
Q
SD
GS
25 ℃
G
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
150 ℃
25 ℃
10
0.8
V
DS
V
DS
= 400V
V
DS
= 250V
6
= 100V
1.0
-55 ℃
15
※
1.2
※
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
Notes :
※
Note
8
GS
DS
Note : I
= 0V
20
= 40V
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1.4
D
= 7A
1.6
25
10