FDU8870 Fairchild Semiconductor, FDU8870 Datasheet - Page 9

MOSFET N-CH 30V 160A I-PAK

FDU8870

Manufacturer Part Number
FDU8870
Description
MOSFET N-CH 30V 160A I-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDU8870

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
118nC @ 10V
Input Capacitance (ciss) @ Vds
5160pF @ 15V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDU8870
Manufacturer:
FAIRCHILD
Quantity:
12 500
www.fairchildsemi.com
SC70-6
FDG6335N
FDG6317NZ
FDG327N
FDG327NZ
FDG329N
FDG311N
FDG6303N
FDG6313N
FDG6301N
FDG313N
FDG315N
FDG361N
FDG6332C
FDG6321C
FDG6320C
FDG6322C
FDG316P
FDG6304P
FDG6302P
FDG314P
FDG6308P
FDG6306P
FDG6318P
FDG6318PZ
FDG326P
FDG328P
FDG312P
DG318P
FDG6316P
FDG330P
SC70-6 N-Channel
SC70-6 Complementary N- and P-Channel
SC70-6 P-Channel
Products
Min. (V)
20 | -20
25 | -25
25 | -25
25 | -25
BV
100
-30
-25
-25
-25
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
25
25
25
25
30
DSS
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
10V
0.12
0.19
0.5
0.3 | 0.42
0.45 | 1.1
0.55@6V
4 | 1.1
0.115
4 | 10
0.145
4.5V
R
0.09
0.09
0.09
0.45
0.45
0.45
0.16
0.42
0.78
0.78
0.14
0.18
0.27
0.11
0.3
0.4
0.3
1.1
1.1
0.4
10
4
DS(ON)
Max (Ω) @ V
2-4
0.6@2.7V | 1.5@2.7V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.6@2.7V
0.6@2.7V
0.6@2.7V
1.5@2.7V
1.5@2.7V
0.4 | 0.63
13@2.7V
5@2.7V
2.5V
0.115
0.55
0.15
0.55
0.63
0.18
0.21
0.25
0.36
0.15
0.4
0.1
0.1
1.2
1.2
GS
=
Replaced by FDG328P
Bold = New Products (introduced January 2003 or later)
0.215
1.8V
0.14
0.14
0.25
0.65
0.8
Discrete Power Products –
Q
@V
0.29 | 0.22
g
1.64 | 1.1
1.1 | 1.4
1.1 | 1.4
Typ. (nC)
GS
0.76
1.64
1.64
0.29
1.64
0.22
0.86
1.08
1.1
4.5
4.2
3.3
2.1
3.7
3.5
1.1
1.1
1.8
1.4
4.4
3.7
3.3
1.7
3
5
= 5V
0.22 | 0.14
0.22 | 0.41
0.5 | 0.41
0.7 | 0.6
I
D
0.22
0.95
0.41
0.14
0.65
0.7
0.7
1.5
1.5
1.5
1.9
0.5
0.5
0.6
1.6
0.6
0.6
0.5
0.5
1.5
1.5
1.2
0.7
2
2
(A)
MOSFETs
P
D
0.42
0.42
0.42
0.75
0.75
0.75
0.42
0.75
0.75
0.75
0.75
0.75
0.75
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
(W)

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