FDS6688 Fairchild Semiconductor, FDS6688 Datasheet - Page 3

• Manufacturer Part Number: FDS6688
• Description: MOSFET N-CH 30V 16A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6688

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3888pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
150
120
1.8
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
90
60
30
Figure 3. On-Resistance Variation with
0
1
0
Figure 1. On-Region Characteristics.
-50
1.5
0
Figure 5. Transfer Characteristics.
V
V
V
GS
DS
I
GS
D
5.0V
-25
= 5V
= 10V
= 16A
= 10V
2
0
0.25
V
T
V
GS
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
3.5V
, DRAIN-SOURCE VOLTAGE (V)
T
25
A
=125
4.5V
2.5
o
50
C
25
0.5
o
C
75
3
-55
100
o
3.0V
C
0.75
o
C)
125
3.5
150
175
1
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.014
0.011
0.008
0.005
0.002
0.01
100
0.1
10
2.2
1.8
1.6
1.4
1.2
0.8
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
2
0
Drain Current and Gate Voltage.
V
V
T
GS
GS
A
= 0V
= 25
= 3.0V
0.2
Gate-to-Source Voltage.
V
SD
o
10
C
V
T
, BODY DIODE FORWARD VOLTAGE (V)
GS
A
4
= 125
, GATE TO SOURCE VOLTAGE (V)
T
0.4
A
I
3.5V
D
o
= 125
, DRAIN CURRENT (A)
C
20
o
C
25
0.6
6
o
4.0V
C
30
-55
4.5V
0.8
o
C
8
6.0V
40
1
FDS6688 Rev D(W)
I
D
10V
= 8A
10
1.2
50