FDU6688 Fairchild Semiconductor, FDU6688 Datasheet

MOSFET N-CH 30V 84A I-PAK

FDU6688

Manufacturer Part Number
FDU6688
Description
MOSFET N-CH 30V 84A I-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDU6688

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 5V
Input Capacitance (ciss) @ Vds
3845pF @ 15V
Power - Max
1.6W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDU6688
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDD6688/FDU6688
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2004 Fairchild Semiconductor Corporation
DC/DC converter
Motor Drives
Absolute Maximum Ratings
Symbo
l
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
G
J
DSS
GSS
D
, T
JC
JA
Device Marking
N-Channel
S
STG
FDD6688
FDU6688
(TO-252)
D-PAK
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
TO-252
MOSFET
DS( ON)
D
and fast switching speed.
– Continuous
– Pulsed
has
FDD6688
FDU6688
Parameter
Device
G D S
been
designed
T
A
=25
D-PAK (TO-252)
(TO-251AA)
I-PAK (TO-251)
o
C unless otherwise noted
Package
I-PAK
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
(Note 1)
(Note 1)
Features
84 A, 30 V.
Low gate charge
Fast switching
High performance trench technology for extremely
low R
DS(ON)
Reel Size
Tube
13’’
R
R
–55 to +175
DS(ON)
DS(ON)
Ratings
G
100
3.8
1.6
1.8
30
84
83
40
96
20
Tape width
= 5 m
= 6 m
12mm
N/A
S
D
@ V
@ V
FDD6688/FDU6688 Rev F(W)
GS
GS
June 2004
= 10 V
= 4.5 V
2500 units
Quantity
75
Units
C/W
W
V
A
C

Related parts for FDU6688

FDU6688 Summary of contents

Page 1

... Package Reel Size D-PAK (TO-252) I-PAK (TO-251) Tube June 2004 DS(ON 4.5 V DS(ON Ratings Units 100 W 83 3.8 1.6 –55 to +175 C 1.8 C Tape width Quantity 13’’ 12mm 2500 units N/A 75 FDD6688/FDU6688 Rev F(W) ...

Page 2

... Gate–Drain Charge 25°C unless otherwise noted A Test Conditions (Note 2) Single Pulse 21A 250 250 A, Referenced 250 250 A, Referenced 4 16 =125 1.0 MHz mV 1.0 MHz GEN V = 15V Min Typ Max Units 370 mV 100 1 1 –5 mV 3845 pF 930 pF 368 pF 1 FDD6688/FDU6688 Rev F(W) ...

Page 3

... A Test Conditions 3.2 A (Note 100 A/µ determined by the user's board design 40°C/W when mounted 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 0.7 1 96°C/W when mounted minimum pad. FDD6688/FDU6688 Rev F(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6688/FDU6688 Rev F(W) 100 10 1.4 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation r( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6688/FDU6688 Rev F(W) 30 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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