FDR840P Fairchild Semiconductor, FDR840P Datasheet - Page 9

• Manufacturer Part Number: FDR840P
• Description: MOSFET P-CH 20V 10A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR840P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4481pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SC70-6
FDG6335N
FDG6317NZ
FDG327N
FDG327NZ
FDG329N
FDG311N
FDG6303N
FDG6313N
FDG6301N
FDG313N
FDG315N
FDG361N
FDG6332C
FDG6321C
FDG6320C
FDG6322C
FDG316P
FDG6304P
FDG6302P
FDG314P
FDG6308P
FDG6306P
FDG6318P
FDG6318PZ
FDG326P
FDG328P
FDG312P
DG318P
FDG6316P
FDG330P
SC70-6 N-Channel
SC70-6 Complementary N- and P-Channel
SC70-6 P-Channel
Products
Min. (V)
20 | -20
25 | -25
25 | -25
25 | -25
BV
100
-30
-25
-25
-25
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
25
25
25
25
30
DSS
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
10V
0.12
0.19
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.3 | 0.42
0.45 | 1.1
0.55@6V
4 | 1.1
0.115
4 | 10
0.145
4.5V
R
0.09
0.09
0.09
0.45
0.45
0.45
0.16
0.42
0.78
0.78
0.14
0.18
0.27
0.11
0.3
0.4
0.3
1.1
1.1
0.4
10
4
DS(ON)
Max (Ω) @ V
2-4
0.6@2.7V | 1.5@2.7V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.6@2.7V
0.6@2.7V
0.6@2.7V
1.5@2.7V
1.5@2.7V
0.4 | 0.63
13@2.7V
5@2.7V
2.5V
0.115
0.55
0.15
0.55
0.63
0.18
0.21
0.25
0.36
0.15
0.4
0.1
0.1
1.2
1.2
–
–
–
GS
=
Replaced by FDG328P
Bold = New Products (introduced January 2003 or later)
0.215
1.8V
0.14
0.14
0.25
0.65
0.8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
0.29 | 0.22
g
1.64 | 1.1
1.1 | 1.4
1.1 | 1.4
Typ. (nC)
GS
0.76
1.64
1.64
0.29
1.64
0.22
0.86
1.08
1.1
4.5
4.2
3.3
2.1
3.7
3.5
1.1
1.1
1.8
1.4
4.4
3.7
3.3
1.7
3
5
= 5V
0.22 | 0.14
0.22 | 0.41
0.5 | 0.41
0.7 | 0.6
I
D
0.22
0.95
0.41
0.14
0.65
0.7
0.7
1.5
1.5
1.5
1.9
0.5
0.5
0.6
1.6
0.6
0.6
0.5
0.5
1.5
1.5
1.2
0.7
2
2
(A)
MOSFETs
P
D
0.42
0.42
0.42
0.75
0.75
0.75
0.42
0.75
0.75
0.75
0.75
0.75
0.75
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
(W)