FCPF11N60F Fairchild Semiconductor, FCPF11N60F Datasheet

MOSFET N-CH 600V 11A TO-220F

FCPF11N60F

Manufacturer Part Number
FCPF11N60F
Description
MOSFET N-CH 600V 11A TO-220F
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCPF11N60F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1490pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Price
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
4 000
Part Number:
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©2008 Fairchild Semiconductor Corporation
FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Fast Recovery Type ( t
• Ultra Low Gate Charge (typ. Q
• Low Effective Output Capacitance (typ. C
• 100% avalanche tested
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Characteristics
• RoHS Compliant
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
Symbol
STG
DS(on)
J
G
= 150°C
D
= 0.32
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
rr
= 120ns)
/FCPF11N60F
TO-220
g
= 40nC)
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
oss
eff.=95pF)
C
C
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
TO-220F
FCP11N60F
FCP11N60F
TM
is, Fairchild’s proprietary, new generation of high
62.5
125
1.0
1.0
0.5
11
33
7
30
-55 to +150
12.5
340
300
4.5
11
FCPF11N60F
FCPF11N60F
G
SuperFET
!
!
0.29 *
62.5
33 *
36 *
11 *
3.5
7 *
--
! "
! "
December 2008
!
!
!
!
S
D
"
"
"
"
"
"
www.fairchildsemi.com
to minimize
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
A
A
A
V
A
TM

Related parts for FCPF11N60F

FCPF11N60F Summary of contents

Page 1

... JC R Thermal Resistance, Case-to-Sink CS R Thermal Resistance, Junction-to-Ambient JA ©2008 Fairchild Semiconductor Corporation FCP11N60F/FCPF11N60F Rev. A1 Description SuperFET TM voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored conduction loss, provide superior switching performance, and eff ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.5A 50V Starting 11A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature FCP11N60F/FCPF11N60F Rev. A1 Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Test Conditions 250 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 1.0 0.8 0.6 0.4 0.2 0 Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCP11N60F/FCPF11N60F Rev. A1 Figure 2. Transfer Characteristics Notes : 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature 12.5 10.0 7.5 5.0 2.5 0 Case Temperature [ C FCP11N60F/FCPF11N60F Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 A D 0.5 0.0 100 150 200 -100 o C] Figure 9-2. Safe Operating Area ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FCP11N60F Figure 11-2. Transient Thermal Response Curve for FCPF11N60F FCP11N60F/FCPF11N60F Rev. A1 (Continued tio ( www.fairchildsemi.com ...

Page 6

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCP11N60F/FCPF11N60F Rev. A1 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCP11N60F/FCPF11N60F Rev DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FCP11N60F/FCPF11N60F Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 ] 0.20 FCP11N60F/FCPF11N60F Rev. A1 (Continued) TO-220F ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 2.54TYP [2.54 ] 0.20 9.40 0.20 9 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP11N60F/FCPF11N60F Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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