FCH47N60 Fairchild Semiconductor, FCH47N60 Datasheet - Page 3

• Manufacturer Part Number: FCH47N60
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCH47N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH47N60 / FCA47N60 Rev. B
Typical Performance Characteristics
0.20
0.15
0.10
0.05
0.00
Figure 5. Capacitance Characteristics
30000
25000
20000
15000
10000
Figure 3. On-Resistance Variation vs.
10
10
10
5000
Figure 1. On-Region Characteristics
2
1
0
10
0
0
10
-1
Drain Current and Gate Voltage
-1
Top :
Bottom : 5.5 V
20
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
40
GS
V
60
C
DS
V
rss
C
DS
, Drain-Source Voltage [V]
C
iss
I
, Drain-Source Voltage [V]
D
oss
10
, Drain Current [A]
10
80
0
0
100
V
120
GS
= 10V
C
C
C
140
iss
oss
rss
* Notes :
= C
= C
= C
10
1. 250
2. T
* Note : T
10
1
gs
gd
ds
C
+ C
V
+ C
1
160
= 25
μ
GS
s Pulse Test
gd
gd
= 20V
o
(C
* Notes :
C
J
1. V
2. f = 1 MHz
ds
= 25
= shorted)
180
GS
o
C
= 0 V
200
3
10
10
10
10
10
10
12
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
2
1
0
Figure 6. Gate Charge Characteristics
8
6
4
2
0
2
1
0
0.2
2
0
Variation vs. Source Current
0.4
50
150
4
25
o
V
and Temperatue
C
V
0.6
o
GS
SD
Q
C
150
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
o
C
25
100
o
0.8
C
V
DS
V
DS
= 400V
6
V
= 250V
DS
-55
= 100V
1.0
150
o
C
* Note
* Notes :
1.2
1. V
2. 250
1. V
2. 250
* Note : I
8
DS
GS
= 40V
μ
200
s Pulse Test
μ
= 0V
s Pulse Test
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D
1.4
= 47A
10
250
1.6