FDS4435 Fairchild Semiconductor, FDS4435 Datasheet - Page 4

• Manufacturer Part Number: FDS4435
• Description: MOSFET P-CH 30V 8.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1604pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4435TR

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
R
0.01
= -8.8A
DS(ON)
SINGLE PULSE
R
0.1
0.0001
V
1
JA
T
GS
A
= 125
LIMIT
= 25
= -10V
D = 0.5
6
0.2
o
o
0.1
C/W
C
0.05
0.02
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
SINGLE PULSE
12
0.001
DC
10s
1s
100ms
Figure 11. Transient Thermal Response Curve.
18
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
10
1ms
DS
100 s
= -5V
0.01
24
-15V
-10V
100
30
0.1
t
1
, TIME (sec)
2500
2000
1500
1000
50
40
30
20
10
500
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
RSS
Figure 10. Single Pulse Maximum
1
0.01
5
C
-V
OSS
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
t
1
10
, TIME (sec)
1
15
C
ISS
Duty Cycle, D = t
P(pk)
T
R
10
20
J
R
JA
- T
JA
(t) = r(t) + R
100
A
SINGLE PULSE
R
= 125
= P * R
t
JA
1
T
t
A
100
= 125°C/W
2
FDS4435 Rev F1(W)
25
= 25°C
o
f = 1 MHz
V
C/W
GS
JA
1
= 0 V
JA
(t)
/ t
1000
2
30
1000