FDFS2P103 Fairchild Semiconductor, FDFS2P103 Datasheet - Page 5

• Manufacturer Part Number: FDFS2P103
• Description: MOSFET P-CH 30V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P103

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 59 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.059 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P103TR; FDFS2P103_NL; FDFS2P103_NLTR; FDFS2P103_NLTR

Typical Characteristics
0.001
0.01
Figure 9. Schottky Diode Forward Voltage.
10
0.1
10
8
6
4
2
0
1
Figure 7. Gate Charge Characteristics.
0
0.01
0
0.1
I
D
1
0.001
= -5.3A
D = 0.5
0.1
2
0.2
0.1
0.05
V
T
F
J
0.02
, FORWARD VOLTAGE (V)
= 125
Q
0.2
0.01
g
, GATE CHARGE (nC)
o
4
C
0.01
SINGLE PULSE
0.3
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
V
T
DS
J
0.4
= 25
= -10V
o
C
8
-20V
0.1
0.5
-15V
10
0.6
t
1
, TIM E (sec)
1
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.00E-07
Figure 10. Schottky Diode Reverse Current.
Figure 8. Capacitance Characteristics.
800
700
600
500
400
300
200
100
0
0
0
C
RSS
10
5
C
OSS
-V
10
DS
V
, DRAIN TO SOURCE VOLTAGE (V)
R
, REVERSE VOLTAGE (V)
10
20
C
ISS
T
T
J
J
= 125
= 25
15
30
o
C
o
P(pk)
C
Duty Cycle, D = t
100
T
R
R
J
JA
- T
20
40
JA
(t) = r(t) * R
A
t
= 135 °C/W
1
= P * R
t
2
FDFS2P103 Rev C(W)
25
50
f = 1 MHz
V
GS
JA
1
JA
(t)
= 0 V
/ t
2
1000
30
60