FDFS2P102 Fairchild Semiconductor, FDFS2P102 Datasheet
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FDFS2P102
Specifications of FDFS2P102
FDFS2P102_NL
FDFS2P102_NLTR
FDFS2P102_NLTR
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Related parts for FDFS2P102
FDFS2P102 Summary of contents
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... FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance ...
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... Min Typ Max Units - - 100 nA -100 0.100 0.125 0.167 0.2 - 270 pF 150 1 -1.3 A -0.8 -1.2 V (Note 2) 250 0.47 V 0.39 0.58 0.53 78 (Note 1a) 40 (Note 1) c) 125 C/W when mounted on a minimum pad. FDFS2P102 Rev. E ...
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... Figure 6. Body Diode Forward Voltage Variation V = 4.0V GS 4.5V 5.0V 6.0V 7.0V 10V DIRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and Temperature. FDFS2P102 Rev 1.4 ...
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... Figure 10. Schottky Diode Reverse Current. 0.01 0 TIME (sec) 1 Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design 1MHz ISS DRAIN TO SOURCE VOLTAGE ( EVER SE V OLTA GE ( ( =135 C/W JA P(pk ( Duty Cycle 100 300 FDFS2P102 Rev. E ...
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TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...