SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet - Page 5

MOSFET N-CH 560V 21A TO220FP

SPA21N50C3

Manufacturer Part Number
SPA21N50C3
Description
MOSFET N-CH 560V 21A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPA21N50C3

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 13.1A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
34.5W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
34500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
21A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
190mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216364
SPA21N50C3IN
SPA21N50C3X
SPA21N50C3XK
SPA21N50C3XTIN
SPA21N50C3XTIN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA21N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
Rev. 3.0
tot
= f ( V
10
10
= f ( T
10
10
10
240
200
180
160
140
120
100
W
A
80
60
40
20
0
-1
-2
2
1
0
10
0
SPP20N65C3
0
DS
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
20
)
)
40
10
60
1
C
=25°C
80
100
10
120
2
°C
V
T
V
C
DS
160
10
Page 5
3
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f ( V
10
10
= f ( T
W
10
10
10
A
35
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
0
SPP20N65C3, SPA20N65C3
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
20
)
)
40
10
60
C
1
= 25°C
80
100
SPI20N65C3
10
2007-08-30
2
120
°C
V
T
V
C
DS
160
10
3

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