SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet
SPA21N50C3
Specifications of SPA21N50C3
SPA21N50C3IN
SPA21N50C3X
SPA21N50C3XK
SPA21N50C3XTIN
SPA21N50C3XTIN
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SPA21N50C3 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature 7) Reverse diode dv/dt Rev. 3 220 PG-TO220FP Ordering Code Q67040-S4565 Q67040-S4564 SP000216364 jmax 2) limited jmax limited jmax page 1 SPP21N50C3 SPI21N50C3, SPA21N50C3 @ jmax R DS(on G-TO262 PG-TO220 Marking 21N50C3 21N50C3 21N50C3 Symbol Value SPP_I SPA ...
Page 2
... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance Rev. 3.2 SPI21N50C3, SPA21N50C3 Symbol dv/dt Symbol R thJC R thJC_FP R thJA R ...
Page 3
... R G d(off =380V, I =21A =380V, I =21A 10V =380V, I =21A V D (plateau) DD =400V, V < <T peak BR, DSS j j,max. page 3 SPP21N50C3 SPI21N50C3, SPA21N50C3 Values min. typ. max 2400 - 1200 - 181 - 10 =0/10V 4 * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
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... Unit Symbol SPA 0.00769 K/W C th1 0.015 C th2 0.029 C th3 0.16 C th4 0.319 C th5 2.523 C th6 th1 th th1 th2 th,n page 4 SPP21N50C3 SPI21N50C3, SPA21N50C3 Values min. typ 450 = 1200 Value SPP_I SPA 0.0003763 0.0003763 0.001411 0.001411 0.001931 0.001931 0.005297 0.005297 0.012 ...
Page 5
... Safe operating area parameter : =25° 0.001 0. 0 Rev. 3.2 2 Power dissipation FullPAK = tot °C 100 120 160 Safe operating area FullPAK parameter page 5 SPP21N50C3 SPI21N50C3, SPA21N50C3 ) 100 120 ) DS = 25° 0.001 0. 0 2009-12-22 °C 160 ...
Page 6
... Rev. 3.2 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 10 single pulse Typ. output characteristic parameter: t Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = page 6 SPP21N50C3 SPI21N50C3, SPA21N50C3 = =150° µ Vgs = 20V Vgs = 7V 30 Vgs = 6V Vgs = ...
Page 7
... Vgs = 4V Vgs = 4.5V 0.8 Vgs = 5V Vgs = 5.5V 0.7 Vgs = 6V Vgs = 20V 0.6 0.5 0.4 0.3 0.2 0 Typ. gate charge = DS(on)max GS parameter 150° page 7 SPP21N50C3 SPI21N50C3, SPA21N50C3 = 13 SPP21N50C3 98% typ 0 -60 - 100 ) Gate = 21 A pulsed D SPP21N50C3 0 max 0 100 2009-12-22 °C 180 ...
Page 8
... Avalanche SOA ≤ 150 °C par 2 Drain-source breakdown voltage V (BR)DSS 600 V 570 560 550 540 530 520 510 500 490 480 470 460 450 °C 120 160 - page 8 SPP21N50C3 SPI21N50C3, SPA21N50C3 ) AR Tj(Start)=25°C Tj(Start)=125° SPP21N50C3 - 100 2009-12- µ °C 180 T j ...
Page 9
... Typ. C stored energy oss E =f(V ) oss DS 10 µ 100 150 200 250 300 350 400 Rev. 3.1 18 Typ. capacitances parameter 500 V DS page 9 SPP21N50C3 SPI21N50C3, SPA21N50C3 ) DS =0V, f=1 MHz Ciss 3 10 Coss 2 10 Crss 100 200 300 500 2009-12-22 ...
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... Definition of diodes switching characteristics Rev. 3.2 SPI21N50C3, SPA21N50C3 page 10 SPP21N50C3 2009-12-22 ...
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... PG-TO220-3-1, PG-TO220-3-21 Rev. 3.2 SPI21N50C3, SPA21N50C3 page 11 SPP21N50C3 2009-12-22 ...
Page 12
PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev. 3.2 SPP16N50C3 SPI16N50C3, SPA16N50C3 24 page 12 2009-12-22 ...
Page 13
... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.2 SPI21N50C3, SPA21N50C3 page 13 SPP21N50C3 2009-12-22 ...
Page 14
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 SPI21N50C3, SPA21N50C3 page 14 SPP21N50C3 2009-12-22 ...