SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet - Page 10

• Manufacturer Part Number: SPA21N50C3
• Description: MOSFET N-CH 560V 21A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA21N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 34.5W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 34500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216364; SPA21N50C3IN; SPA21N50C3X; SPA21N50C3XK; SPA21N50C3XTIN; SPA21N50C3XTIN

21 Drain-source breakdown voltage
V
23 Typ. capacitances
C = f ( V
parameter: V
Rev. 3.0
(BR)DSS
pF
10
10
10
10
10
10
785
745
725
705
685
665
645
625
605
585
V
-60
5
4
3
2
1
0
0
SPP20N65C3
DS
= f ( T
)
100
-20
Crss
GS
j
)
=0V, f=1 MHz
200
20
Coss
Ciss
300
60
100
400
°C
V
T
V
j
DS
180
600
Page 10
22 Avalanche power losses
P
parameter: E
24 Typ. C
E
AR
oss
µJ
W
500
400
350
300
250
200
150
100
= f ( V
= f ( f )
50
14
12
11
10
0
9
8
7
6
5
4
3
2
1
0
10
0
4
DS
SPP20N65C3, SPA20N65C3
oss
)
100
AR
stored energy
=1mJ
200
300
10
5
SPI20N65C3
400
2007-08-30
Hz
V
f
V
DS
600
10
6