SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet - Page 4

• Manufacturer Part Number: SPA21N50C3
• Description: MOSFET N-CH 560V 21A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA21N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 34.5W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 34500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216364; SPA21N50C3IN; SPA21N50C3X; SPA21N50C3XK; SPA21N50C3XTIN; SPA21N50C3XTIN

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
Rev. 3.0
th1
th2
th3
th4
th5
th6
0.00769
SPP_I
0.015
0.029
0.114
0.136
0.059
P
tot
(t)
Value
T
0.00769
j
C
0.015
0.029
0.163
0.323
2.526
SPA
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
T
V
V
di
T
Page 4
C
j
GS
R
F
=25°C
C
=25°C
=480V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
Conditions
th,n
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
SPP20N65C3, SPA20N65C3
,
0.0003763
0.001411
0.001931
0.005297
SPP_I
0.012
0.091
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0003763
1400
0.001411
0.001931
0.005297
0.008453
typ.
500
11
70
1
-
-
0.412
SPA
SPI20N65C3
2007-08-30
max.
20.7 A
62.1
800
1.2
-
-
-
Unit
Ws/K
Unit
V
ns
µC
A
A/µs