SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPA21N50C3
• Description: MOSFET N-CH 560V 21A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA21N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 34.5W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 34500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216364; SPA21N50C3IN; SPA21N50C3X; SPA21N50C3XK; SPA21N50C3XTIN; SPA21N50C3XTIN

Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Rev. 3.0
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 C
5 C
o(tr)
o(er)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
4)
5)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
Page 3
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
R
V
I
R
D
D
D
DS
GS
GS
DS
DD
G
DD
G
DD
DD
GS
DD
=13.1A
=20.7A,
=20.7A,
=3.6Ω, T
=3.6Ω
≥2*I
=0V to 480V
=0V, V
=0V,
=380V, V
=380V, V
=480V, I
=480V, I
=0 to 10V
=480V, I
Conditions
D
*R
DS
j
DS(on)max
=125
D
D
D
GS
GS
=25V,
=20.7A
=20.7A,
=20.7A
=0/13V,
=0/13V,
oss
SPP20N65C3, SPA20N65C3
oss
while V
,
while V
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
2400
17.5
typ.
780
160
5.5
4.5
11
33
87
50
83
10
67
*f.
5
SPI20N65C3
2007-08-30
max.
114
100
12
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns
DSS
DSS
.
.