IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7494PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Notes:

‚
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
R
When mounted on 1 inch square copper
board, t
max. junction temperature.
Starting T
G
= 25Ω, I
≤
J
10 sec.
AS
= 25°C, L = 55mH,
= 3.1A.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the Consumer market.
8.1 ( .318 )
7.9 ( .312 )
TERMINAL NUMBER 1
(12.992)
330.00
MAX.
„
…
†
‡
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
C
I
as C
Visit us at www.irf.com for sales contact information.10/2009
SD
oss
θ
is measured at
≤ 3.1A, di/dt ≤ 1907A/µs, V
Data and specifications subject to change without notice.
eff. is a fixed capacitance that gives the same charging time
oss
Qualifications Standards can be found on IR’s Web site.
while V
DS
is rising from 0 to 80% V
T
FEED DIRECTION
J
of approximately 90°C.
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
DD
≤ V
(BR)DSS
TAC Fax: [phone]
DSS
, T
.
J
≤ 150°C.
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