IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
IRF7494PbF
I
AS
Fig 15a&b. Unclamped Inductive Test circuit
6
Fig 14a&b. Basic Gate Charge Test Circuit
Fig 12. On-Resistance vs. Drain Current
50
45
40
35
30
1K
t p
0
5
V
DUT
(BR)DSS
and Waveforms
10
and Waveform
L
Vgs = 10V
I D , Drain Current (A)
15
VCC
R G
20V
20
V DS
V
GS
t p
25
V
I AS
G
D.U.T
0.01 Ω
L
Q
30
GS
35
Q
Charge
Q
GD
G
15V
40
DRIVER
+
-
45
V DD
A
100
700
600
500
400
300
200
100
90
80
70
60
50
40
30
20
Fig 13. On-Resistance vs. Gate Voltage
0
25
Fig 15c. Maximum Avalanche Energy
4
Starting T J , Junction Temperature (°C)
6
V GS, Gate -to -Source Voltage (V)
50
8
vs. Drain Current
10
75
12
TOP
BOTTOM 3.1A
100
14
T J = 125°C
T J = 25°C
www.irf.com
16
I D = 5.1A
125
I D
1.4A
2.5A
18
150
20