IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7494PbF
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
(BR)DSS
GS(th)
AS
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ù
Parameter
Parameter
Parameter
Ù
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.5
12
1783
0.13
–––
–––
–––
–––
–––
–––
–––
222
104
886
121
189
–––
–––
–––
6.4
35
35
13
10
29
14
45
93
9
-100
Typ.
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
2.3
1.3
44
10
53
40
V/°C
mΩ
µA
nA
nC
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 3.1A
= 3.1A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 120V, V
= 120V, V
= 50V, I
= 75V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
262
, I
3.1
D
f
f
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 250µA
= 3.1A, V
= 5.1A
= 3.1A, V
= 3.1A
GS
GS
= 0V to 120V
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
D
f
= 1mA
GS
DD
G
J
= 125°C
= 25V
= 0V
Units
g
mJ
A
f
D
S