IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
100
0.1
Fig 3. Typical Transfer Characteristics
0.1
10
Fig 1. Typical Output Characteristics
10
1
1
3.0
0.1
V DS = 50V
≤60µs PULSE WIDTH
T J = 150°C
3.5
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
≤60µs PULSE WIDTH Tj = 25°C
4.0
1
4.25V
4.5
T J = 25°C
5.0
10
TOP
BOTTOM
5.5
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
100
6.0
100
2.5
2.0
1.5
1.0
0.5
0.1
10
Fig 2. Typical Output Characteristics
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
Fig 4. Normalized On-Resistance
I D = 5.1A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
≤60µs PULSE WIDTH Tj = 150°C
vs. Temperature
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
1
IRF7494PbF
4.25V
10
100
3