IRF7494PBF International Rectifier, IRF7494PBF Datasheet

MOSFET N-CH 150V 5.2A 8-SOIC

IRF7494PBF

Manufacturer Part Number
IRF7494PBF
Description
MOSFET N-CH 150V 5.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7494PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
44 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
5.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
Benefits
l
l
l
Applications
www.irf.com
V
V
I
I
I
P
dv/dt
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
Notes  through
D
D
DM
DS
GS
D
J
STG
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Lead-Free
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
are on page 8
Parameter
Parameter
i
h
GS
GS
@ 10V
@ 10V
e
150V
V
DSS
G
S
S
S
1
2
3
4
Top View
44m Ω @V
Typ.
R
–––
–––
DS(on)
HEXFET
-55 to + 150
8
IRF7494PbF
7
6
5
Max.
± 20
0.02
150
5.1
4.0
2.5
40
33
D
D
D
D
GS
A
A
max
= 10V
®
Max.
20
50
Power MOSFET
SO-8
5.1A
Units
Units
W/°C
°C/W
V/ns
I
°C
10/15/09
W
D
V
A
1

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IRF7494PBF Summary of contents

Page 1

... Notes  through are on page 8 ‡ www.irf.com V R DSS 44m Ω @V 150V Top View Parameter @ 10V GS @ 10V GS h Parameter Typ. i ––– e ––– IRF7494PbF ® HEXFET Power MOSFET max I DS(on 10V 5. SO-8 Max. Units 150 V ± 20 5.1 4 ...

Page 2

... IRF7494PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 2. Typical Output Characteristics 2 5. 10V 2.0 1.5 1.0 0.5 -60 -40 - 100 120 140 160 5.0 5.5 6.0 Fig 4. Normalized On-Resistance IRF7494PbF VGS 15.0V 10.0V 8.00V 5.50V 5.00V 4.75V 4.50V 4.25V 4.25V ≤60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( Junction Temperature (° ...

Page 4

... IRF7494PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 150° 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 3.1A 12.0 10 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7494PbF + - ≤ 1 ≤ 0 d(off) f Notes: 1. Duty Factor D = t1/t2 2. Peak Zthja + 100 5 ...

Page 6

... IRF7494PbF 50 45 Vgs = 10V Drain Current (A) Fig 12. On-Resistance vs. Drain Current VCC DUT 0 1K Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 100 Fig 13. On-Resistance vs. Gate Voltage Q G 700 600 Charge ...

Page 7

... Fetky) 9DH !$Ãb dà ’ FÑÃ#$ƒ ’  Ãb#dà YÃG & "Yà !&Ãb$d ;;;;  GPBP IRF7494PbF DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ &$ # ('   !$  " ! "" $ &$ ('  ( !$  '(  (%' #' $  #(& ...

Page 8

... IRF7494PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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