IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7494PbF
100000
10000
4
1000
100
100
0.1
10
10
1
Fig 5. Typical Capacitance vs.
0.2
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
0.3
T J = 150°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
10
C rss
0.5
C oss
C iss
f = 1 MHZ
0.6
T J = 25°C
0.7
100
0.8
V GS = 0V
0.9
1000
1.0
1000
14.0
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
1
Fig 8. Maximum Safe Operating Area
0
0
Fig 6. Typical Gate Charge vs.
I D = 3.1A
T A = 25°C
Tj = 150°C
Single Pulse
5
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V DS = 120V
V DS = 75V
VDS= 30V
Q G , Total Gate Charge (nC)
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
15
20
10msec
10
25
1msec
30
100µsec
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100
35
40
1000
45