BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

Philips Semiconductors
9397 750 09573
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
I D
(A)
V
V
100
DS
GS
80
60
40
20
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
T j = 175 ºC
1
2
T j = 25 ºC
I S
(A)
100
80
60
40
20
0
3
0.0
V GS (V)
03ni45
4
0.3
T j = 175 ºC
Rev. 03 — 6 May 2002
0.6
Fig 14. Gate-source voltage as a function of turn-on
V GS
(V)
T
j
= 25 C; I
5
4
3
2
1
0
0.9
T j = 25 ºC
gate charge; typical values.
0
V SD (V)
03ni42
D
20
V DD = 14 V
= 25 A
1.2
BUK95/9608-55A
40
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
60
V DD = 44 V
80
Q G (nC)
03ni43
100
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