BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 12

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

Philips Semiconductors
11. Revision history
Table 6:
9397 750 09573
Product data
Rev Date
03
20020506
Revision history
CPCN
-
Description
Product data (9397 750 09573); supersedes Product data of BUK9508_9608-55A_2 of 4
of September 2000.
Modifications:
•
•
•
•
The format of this specification has been redesigned to comply with Philips
Semiconductors’ new presentation and information standard.
Thermal resistance figure lowered (j-mb)
devices current and power handling capabilities (See
Maximum gate-source voltage increased from
Switching speeds re-measured in dynamic characteristics
Rev. 03 — 6 May 2002
Section
10 to
7. This has a knock on effect on the
BUK95/9608-55A
Section 5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
15 V
Section
(Section
and
8.
Section
6).
6).
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