BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet
BUK9608-55A,118
Specifications of BUK9608-55A,118
BUK9608-55A /T3
BUK9608-55A /T3
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BUK9608-55A,118 Summary of contents
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... BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol mb G ...
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... °C; unclamped GS j(init) 03ni52 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1; - [2] - [2] Figure 1 - ≤ 10 µs; see Figure -55 -55 [ ° ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9608-55A Product data sheet Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET 03ni50 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9608-55A Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Min Typ Max - - 0. 03ni51 −2 −1 ...
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... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 °C 50 ...
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... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Min Typ = 25 ° ° 170 9 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... GS Fig 10. Gate-source threshold voltage as a function of 03ni48 3 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET 2.5 2 max 1.5 typ min 1 0 120 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET 12000 C C iss 10000 C oss 8000 C rss 6000 4000 2000 0 −2 −1 ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9608-55A separated from data sheet BUK95_9608_55A v.3. BUK95_9608_55A v.3 20020506 BUK9608-55A Product data sheet ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 January 2011 BUK9608-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 January 2011 Document identifier: BUK9608-55A ...