BUK9608-55B NXP Semiconductors, BUK9608-55B Datasheet
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK9608-55B
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BUK9608-55B Summary of contents
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... BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 — 4 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min ≤ sup = 5 V; ...
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... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ Max - - - [ [2] 1 ...
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... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nn55 = 10 μ ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9608-55B Product data sheet Conditions see Figure 4 minimum footprint; mounted on a PCB −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ - - - 50 03nn56 t p δ ...
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... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...
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... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 03nn53 Label 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − ...
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... 175 ° 0.0 0.5 All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET 6000 C iss C (pF) 4000 C oss 2000 C rss 0 −2 − function of drain-source voltage; typical ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...
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... Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET Supersedes BUK9608-55B_3 BUK95_96_9E08_55B-02 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 May 2010 BUK9608-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 May 2010 Document identifier: BUK9608-55B ...