BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 11

MOSFET N-CH 55V 75A SOT404

BUK9608-55A,118

Manufacturer Part Number
BUK9608-55A,118
Description
MOSFET N-CH 55V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9608-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 5V
Input Capacitance (ciss) @ Vds
6021pF @ 25V
Power - Max
253W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
125 A
Power Dissipation
253000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055645118
BUK9608-55A /T3
BUK9608-55A /T3
Philips Semiconductors
10. Soldering
9397 750 09573
Product data
Fig 18. Reflow soldering footprint for SOT404.
handbook, full pagewidth
Dimensions in mm.
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 03 — 6 May 2002
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
MSD057
BUK95/9608-55A
0.20
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.40
8.275
8.075
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