BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 8

MOSFET N-CH 55V 75A SOT404

BUK9608-55A,118

Manufacturer Part Number
BUK9608-55A,118
Description
MOSFET N-CH 55V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9608-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 5V
Input Capacitance (ciss) @ Vds
6021pF @ 25V
Power - Max
253W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
125 A
Power Dissipation
253000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055645118
BUK9608-55A /T3
BUK9608-55A /T3
NXP Semiconductors
BUK9608-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
20
15
10
0
5
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
= 3 V
100
T
1
j
3.2 V
= 175 °C
3.4 V
200
3.6 V
2
4 V
3.8 V
T
j
= 25 °C
300
3
10 V
5 V
All information provided in this document is subject to legal disclaimers.
V
I
GS
D
(A)
03ni45
03ni48
(V)
Rev. 04 — 31 January 2011
400
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9608-55A
60
60
max
typ
min
120
120
© NXP B.V. 2011. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
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