BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9608-55A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
0.05
−6
0.2
0.1
0.02
Thermal characteristics
δ = 0.5
single shot
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 04 — 31 January 2011
Conditions
see
mounted on a printed-circuit board ;
minimum footprint
Figure 4
10
−3
10
N-channel TrenchMOS logic level FET
−2
BUK9608-55A
Min
-
-
10
−1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
t
p
(s)
Max
0.59
-
03ni51
1
Unit
K/W
K/W
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