BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

NXP Semiconductors
Table 6.
BUK9608-55A
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
10
I
10
10
10
10
10
D
D
400
300
200
100
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
8
6
1
min
4
4.8
…continued
5
typ
6
2.6
label is V
4.2
3.8
3.6
3.4
3.2
2.8
2.4
2.2
4.6
4.4
2
4
3
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
GS
V
DS
(V)
(V)
03ni47
(V)
Conditions
I
see
I
V
Rev. 04 — 31 January 2011
S
S
10
GS
3
= 25 A; V
= 75 A; dI
Figure 15
= -10 V; V
GS
S
/dt = -100 A/µs;
Fig 6.
Fig 8.
DS
= 0 V; T
R
= 25 V; T
(mΩ)
DSon
(S)
g
fs
120
100
80
60
40
20
9
8
7
6
5
0
j
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
= 25 °C;
j
= 25 °C
N-channel TrenchMOS logic level FET
20
5
BUK9608-55A
Min
-
-
-
40
10
Typ
0.85
70
170
60
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
(A)
Max
1.2
-
-
03ni46
03ni44
15
80
Unit
V
ns
nC
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