PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 9

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
9. Package outline
Fig 14. SOT96-1 (SO8).
9397 750 09334
Product data
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
inches
UNIT
mm
OUTLINE
VERSION
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
y
A
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
0.20
0.19
p
D
5.0
4.8
5
4
0
(1)
Rev. 01 — 6 March 2002
w
0.16
0.15
E
4.0
3.8
(2)
M
scale
0.050
EIAJ
1.27
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
(A )
EUROPEAN
PSMN005-30K
0.25
0.01
3
A
v
0.25
0.01
A
w
X
v
M
0.004
A
0.1
y
ISSUE DATE
97-05-22
99-12-27
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
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