PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 7

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
9397 750 09334
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
I
V
D
GS
= 1 mA; V
junction temperature.
= 0 V; f = 1 MHz
4
3
2
1
0
-60
DS
= V
0
GS
max
typ
min
60
120
(pF)
C
10 4
10 3
10 2
10 -1
03af65
180
Rev. 01 — 6 March 2002
1
Fig 10. Sub-threshold drain current as a function of
10
T
j
= 25 C; V
V DS (V)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
gate-source voltage.
C iss
C oss
C rss
0
03ah10
10 2
DS
= 5 V
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
2
typ
3
max
03af66
4
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