PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 8

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
9397 750 09334
Product data
Fig 12. Source (diode forward) current as a function of
T
j
= 25 C and 175 C; V
source-drain (diode forward) voltage; typical
values.
(A)
60
I S
40
20
0
0
V GS = 0 V
0.4
150 ºC
GS
= 0 V
0.8
T j = 25 ºC
V SD (V)
03ah09
1.2
Rev. 01 — 6 March 2002
Fig 13. Gate-source voltage as a function of gate
I
D
= 20 A; V
V GS
(V)
charge; typical values.
10
8
6
4
2
0
0
I D = 20 A
T j = 25 ºC
V DD = 15 V
DD
= 15 V
20
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
40
60
Q G (nC)
03ah11
80
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