PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 3

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
9397 750 09334
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
P der
der
(%)
function of mounting base temperature.
= 25 C; I
120
80
40
0
=
(A)
0
I D
10 -1
10 -2
---------------------- -
P
10 3
10 2
10
tot 25 C
1
P
10 -1
DM
tot
is single pulse.
50
100%
R DSon = V DS / I D
100
150
T sp (ºC)
03aa17
1
200
Rev. 01 — 6 March 2002
DC
Fig 2. Normalized continuous drain current as a
I
der
I der
(%)
120
function of mounting base temperature.
80
40
=
0
0
-------------------
I
10
D 25 C
I
D
50
100%
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
V DS (V)
100
10 ms
100 ms
t p = 10 µs
100 µs
1 ms
150
03ah05
T sp (
10 2
03aa25
o
C)
200
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