BUK9624-55A,118 NXP Semiconductors, BUK9624-55A,118 Datasheet - Page 9

MOSFET N-CH 55V 46A D2PAK

BUK9624-55A,118

Manufacturer Part Number
BUK9624-55A,118
Description
MOSFET N-CH 55V 46A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9624-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21.7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1815pF @ 25V
Power - Max
105W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0217 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
46 A
Power Dissipation
105000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056287118
BUK9624-55A /T3
BUK9624-55A /T3
9. Package outline
Fig 16. SOT78 (TO-220AB).
Philips Semiconductors
9397 750 07538
Product specification
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 2
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
Rev. 01 — 29 September 2000
2
e
D 1
6.4
5.9
0
3
b
BUK9524-55A; BUK9624-55A
10.3
9.7
E
L 1
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
L 1
max.
L 2
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
TrenchMOS™ logic level FET
c
EUROPEAN
P
3.0
2.7
© Philips Electronics N.V. 2000. All rights reserved.
q
2.6
2.2
Q
ISSUE DATE
99-09-13
00-09-07
SOT78
9 of 15

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