BUK9624-55A,118 NXP Semiconductors, BUK9624-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9624-55A,118
• Description: MOSFET N-CH 55V 46A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9624-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1815pF @ 25V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0217 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 46 A
• Power Dissipation: 105000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056287118; BUK9624-55A /T3; BUK9624-55A /T3

Philips Semiconductors
9397 750 07538
Product specification
Fig 13. Transfer characteristics; drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
(A)
I D
100
90
80
70
60
50
40
30
20
10
0
0
1
2
T j = 25 o C
3
4
175 o C
V GS (V)
(A)
I S
100
90
80
70
60
50
40
30
20
10
5
0
03na00
0
Rev. 01 — 29 September 2000
6
0.2
0.4
BUK9524-55A; BUK9624-55A
0.6
Tj = 175 o C
0.8
Fig 14. Gate-source voltage as a function of turn-on
T
1
j
Tj = 25 o C
= 25 C; I
gate charge; typical values.
1.2
V GS
(V)
V SD (V)
6
5
4
3
2
1
0
1.4
0
03na01
D
= 25 A
1.6
10
VDS= 14V
TrenchMOS™ logic level FET
20
VDS= 44V
© Philips Electronics N.V. 2000. All rights reserved.
30
Q G (nC)
03na02
40
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