BUK9624-55A,118 NXP Semiconductors, BUK9624-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9624-55A,118
• Description: MOSFET N-CH 55V 46A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9624-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1815pF @ 25V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0217 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 46 A
• Power Dissipation: 105000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056287118; BUK9624-55A /T3; BUK9624-55A /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07538
Product specification
Symbol
R
R
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
SOT78
SOT404
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10 -2
10 -1
10
1
10 -6
Rev. 01 — 29 September 2000
10 -5
BUK9524-55A; BUK9624-55A
Conditions
vertical in still air;
lead length
10 -4
5 mm;
10 -3
Figure 4
TrenchMOS™ logic level FET
10 -2
© Philips Electronics N.V. 2000. All rights reserved.
P
Value
60
50
1.4
10 -1
t p
T
t p (s)
03na07
=
t p
T
t
Unit
K/W
K/W
K/W
1
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